08 Sep
GaN Technology Development Leader
Vermont, Essex , 05452 Essex USA

Vacancy expired!

Description:

About GLOBALFOUNDRIES\: GLOBALFOUNDRIES is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world's most inspired technology companies. With a global manufacturing footprint spanning three continents, GLOBALFOUNDRIES makes possible the technologies and systems that transform industries and give customers the power to shape their markets. GLOBALFOUNDRIES is owned by Mubadala Investment Company. For more information, visit www.globalfoundries.com.

Summary of Role\: GLOBALFOUNDRIES is seeking highly skilled and motivated semiconductor development engineer to join our FAB9 Technology Development team in order to develop and qualify world class RF and Analog Mixed Signal (AMS) technologies for manufacture in the 200mm manufacturing fabricator in Vermont (FAB9). This posting is for technology development project leader, to lead and drive the advancement of RF GaN-on-Silicon technologies. GLOBALFOUNDRIES is seeking highly skilled and motivated semiconductor development engineer to join our FAB9 Technology Development team in order to develop and qualify world class RF and Analog Mixed Signal (AMS) technologies for manufacture in the 200mm manufacturing fabricator in Vermont (FAB9). This posting is for technology development project leader, to lead and drive the advancement of RF GaN-on-Silicon technologies. Essential Responsibilities\: Initial and primary responsibilities could include but not limited to the following\:
  • Leading a cross functional team to develop world class RF GaN-on-Si device technology offering meeting performance requirements, while ensuring high volume manufacturability, reliability and quality.
  • Research new materials and device structures to enable improved performance in RF applications.
  • Direct the team on definition of primary cell device design layout and design levels.
  • Direct the team to understand and optimize device performance and its relationship to device processes.
  • Plan and manage processing of wafer lots to meet program schedules.
  • Address customer requests/issues which may involve creation of a custom device and/or electrical test.
  • Work with external suppliers and vendors on novel tooling, wafer processing solutions, and materials.
  • Work with semiconductor process teams on novel process integration.
  • Work with the reliability teams on any issues/concerns with the quality of the new semiconductor devices.
  • Document and define design of experiments and subsequent data analysis.
  • Collaborate with the various development device, process integration, and program management teams within our group to ensure new devices meet performance, reliability, yield, and cost objectives.
  • Collaborate with various engineering teams outside the immediate area, e.g., testing, failure analysis, unit process, reliability, manufacturing, and PDK organizations, to facilitate and achieve program success.
  • Being able to direct electrical device characterization, and drive analysis and team to meet best in class device performance. Includes DC, AC, and RF test and analysis of electrical devices.
  • Mentor less experienced team members on GaN HEMT device physics and relevant test and characterization techniques.
  • Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.
Qualification: Required Qualifications\:
  • Education - Minimum Masters Degree in Electrical Engineering, Solid State Physics, Microelectronics, or other relevant engineering or physical science discipline.
  • More than 3 years of GaN HEMT device engineering and reliability experience.
  • Experience with GaN technology qualification.
  • More than 3 years of GaN technology manufacturing experience.
  • Familiarity with RF GaN applications and marketplace.
  • Strong project management and leadership skills.
  • Strong knowledge and experience at effectively using FMEA and formal problem solving methodologies to drive efficient development learning cycles.
  • Strong semiconductor device engineering and electrical testing, analysis, and characterization skills.
  • A comprehensive knowledge of modern semiconductor device physics (FET & BJT device, bulk & SOI device structures). Including associated electrical test and analysis methods of discrete device structures .
  • Language Fluency - Fluent in English Language - written & verbal.
Preferred Qualifications\:
  • PhD in Electrical Engineering, Microelectronics, or Solid State Physics discipline.
  • More than 5 years of GaN HEMT device engineering and reliability experience.
  • More than 3 years of GaN technology manufacturing experience.
  • Excellent interpersonal skills, energetic, motivated, and self-driven.
  • Demonstrate ability to work well within a global matrixed team or environment with minimal supervision.
  • Outstanding communication skills - both written and verbal.
  • Demonstrated ability to communicate well with all levels of the organization and experience in working with external constituencies.
  • Strong organizational skills; demonstrated ability to manage multiple tasks simultaneously and able to react to shifting priorities to meet business needs.
  • Demonstrated ability to meet deadlines and commitments.
  • Familiar with formal quality processes and specifications, such as 5S, 8D, 6-sigma, Cp, Cpk, SPC, DOE, and FMEA.
If you need a reasonable accommodation for any part of the employment process, please contact us by email at usaccommodations@globalfoundries.com and let us know the nature of your request and your contact information. Requests for accommodation will be considered on a case-by-case basis. Please note that only inquiries concerning a request for reasonable accommodation will be responded to from this email address. An offer of employment with GLOBALFOUNDRIES is conditioned upon the successful completion of a background check and drug screen, as applicable and subject to applicable laws and regulations. GLOBALFOUNDRIES is fully committed to equal opportunity in the workplace and believes that cultural diversity within the company enhances its business potential. GLOBALFOUNDRIES goal of excellence in business necessitates the attraction and retention of highly qualified people. Artificial barriers and stereotypic biases detract from this objective and may be illegally discriminatory. All policies and processes which pertain to employees including recruitment, selection, training, utilization, promotion, compensation, benefits, extracurricular programs, and termination are created and implemented without regard to age, ethnicity, ancestry, color, marital status, medical condition, mental or physical disability, national origin, race, religion, political and/or third-party affiliation, sex, sexual orientation, gender identity or expression, veteran status, or any other characteristic or category specified by local, state or federal law.

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